Samsung Electronics says HBM to account for nearly 30% of industry DRAM capacity next year

Business Recorder reported that Samsung Electronics executive vice president Kim Taewoo stated on Tuesday that high-bandwidth memory is projected to make up nearly 30% of total wafer capacity across DRAM chipmakers next year. That share would rise from roughly 20% at present, according to the report. Kim noted that HBM and standard DRAM draw on the same wafer capacity, so expanding HBM output could limit standard DRAM supply. The comments were reported from Seoul.

HBM is a key component for AI computing and is built by stacking memory chips vertically, which lets processors access very large amounts of data at high speed. Leading players in this market include Samsung Electronics, SK Hynix from South Korea and the US-based Micron Technology.